JPH0315852B2 - - Google Patents

Info

Publication number
JPH0315852B2
JPH0315852B2 JP57153617A JP15361782A JPH0315852B2 JP H0315852 B2 JPH0315852 B2 JP H0315852B2 JP 57153617 A JP57153617 A JP 57153617A JP 15361782 A JP15361782 A JP 15361782A JP H0315852 B2 JPH0315852 B2 JP H0315852B2
Authority
JP
Japan
Prior art keywords
photothyristor
triax
emitting diode
light emitting
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57153617A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5943630A (ja
Inventor
Hidekazu Awaji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP57153617A priority Critical patent/JPS5943630A/ja
Publication of JPS5943630A publication Critical patent/JPS5943630A/ja
Priority to US06/814,160 priority patent/US4658145A/en
Publication of JPH0315852B2 publication Critical patent/JPH0315852B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H10F55/15—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/155—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate

Landscapes

  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)
JP57153617A 1982-09-02 1982-09-02 ソリツドステ−トリレ− Granted JPS5943630A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57153617A JPS5943630A (ja) 1982-09-02 1982-09-02 ソリツドステ−トリレ−
US06/814,160 US4658145A (en) 1982-09-02 1985-12-23 Solid state relay

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57153617A JPS5943630A (ja) 1982-09-02 1982-09-02 ソリツドステ−トリレ−

Publications (2)

Publication Number Publication Date
JPS5943630A JPS5943630A (ja) 1984-03-10
JPH0315852B2 true JPH0315852B2 (en]) 1991-03-04

Family

ID=15566401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57153617A Granted JPS5943630A (ja) 1982-09-02 1982-09-02 ソリツドステ−トリレ−

Country Status (2)

Country Link
US (1) US4658145A (en])
JP (1) JPS5943630A (en])

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62110317A (ja) * 1985-11-08 1987-05-21 Toshiba Corp 固体継電器
JPS62179601U (en]) * 1986-04-30 1987-11-14
JPS6327677A (ja) * 1986-07-22 1988-02-05 川重工事株式会社 立体駐輪場構造
JPS63107223A (ja) * 1986-10-23 1988-05-12 Mitsubishi Electric Corp トライアツクトリガ用光結合半導体素子
JPS6437136U (en]) * 1987-08-28 1989-03-06
US4906858A (en) * 1987-11-13 1990-03-06 Honeywell Inc. Controlled switching circuit
US5136213A (en) * 1989-06-26 1992-08-04 C&K Components, Inc. Motion detecting light controller system
US5338991A (en) * 1992-12-28 1994-08-16 Lu Chao Cheng High power solid state relay with input presence and polarity indication
US20050179271A1 (en) * 2004-02-13 2005-08-18 Gerry Kerr Golf ball retriever
CN103346759B (zh) * 2013-07-23 2016-01-13 郁百超 微功耗工频脉宽调制开关电源
JP6253439B2 (ja) * 2014-02-17 2017-12-27 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216473B2 (en]) * 1972-07-24 1977-05-10
US4309605A (en) * 1979-10-02 1982-01-05 New Japan Radio Co., Ltd. Photo-reflective sensor
JPS5723266A (en) * 1980-07-18 1982-02-06 Nec Corp Photocontrol semiconductor switch
JPS57193964A (en) * 1981-05-20 1982-11-29 Toshiba Corp Switching device

Also Published As

Publication number Publication date
US4658145A (en) 1987-04-14
JPS5943630A (ja) 1984-03-10

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